Head of PA Development

Are you passionate about advancing RF technology and semiconductor innovation? At Falcomm, we are transforming semiconductor technologies into real-world solutions by developing high-performance, energy-efficient RF power amplifier products. Our mission is to push the boundaries of wireless communication performance while enabling more sustainable and efficient technologies.

Falcomm is seeking a Head of PA Development to lead the design, development, and production of next-generation RF power amplifier solutions. This role will oversee the full lifecycle of PA product development, from architecture and circuit design through silicon validation and production ramp, while working closely with cross-functional teams across RFIC design, packaging, testing, and manufacturing.

The ideal candidate combines strong RF design expertise with leadership experience and a passion for delivering innovative semiconductor solutions in a fast-paced startup environment.

Responsibilities:

• Lead the architecture, design, and development of RF power amplifier circuits for advanced wireless communication systems.
• Manage and mentor a team of RFIC designers working on PA development across multiple semiconductor technologies.
• Define performance targets including output power, efficiency, linearity, gain, and bandwidth based on system requirements.
• Oversee the full product lifecycle including architecture development, circuit design, simulation, layout review, tape-out, silicon validation, and production ramp.
• Collaborate with RFIC designers, packaging engineers, and test teams to optimize overall RF front-end performance.
• Guide design trade-off decisions across efficiency, thermal performance, linearity, and integration constraints.
• Support silicon bring-up, characterization, and debugging activities following fabrication.
• Work with supply chain and manufacturing teams to ensure smooth transition from prototype to volume production.
• Drive continuous improvement in PA performance, design methodologies, and development workflows.

Requirements:
• Master’s, or PhD in Electrical Engineering or a related field.

• 8+ years of experience in RF power amplifier design.
• Experience designing RFICs or RF power amplifiers for wireless communication systems.
• Strong understanding of RF circuit theory, transistor behavior, and PA architectures.
• Experience delivering PA products through tape-out and validation.
• Must be willing to work full-time, onsite, in Atlanta, GA.

Preferred Skills:

• Experience designing high-efficiency PA architectures such as Doherty, and Class AB.
• Hands-on experience with RFIC technologies such as SOI or GaN.
• Familiarity with RF simulation and design tools such as Cadence, ADS, or similar platforms.
• Experience leading cross-functional engineering teams and delivering silicon products to production.

Benefits:
• Competitive Salary and Equity Package
• Comprehensive Health, Dental, and Vision Insurance
• 401(k) Retirement Plan
• Paid Time Off (PTO) and Sick Leave

Disclosure:

• Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status.
• Applicants wishing to view a copy of Falcomm’s Affirmative Action Plan for veterans and individuals with disabilities, or applicants requiring reasonable accommodation to the application/interview process should notify Falcomm.
• To conform to U.S. Government export regulations, including the International Traffic in Arms Regulations (ITAR) you must be a U.S. citizen, lawful permanent resident of the U.S., protected individual as defined by 8 U.S.C. 1324b(a)(3), or eligible to obtain the required authorizations from the U.S. Department of State.